| 摘要 |
The present invention relates to a charged-particle beam lithography apparatus, a lithography method using the charged-particle beam, and a shot correcting method in the charged-particle beam lithography. In a charged-particle beam lithography apparatus which writes a latent image of micropatterns on a resist layer using charged-particle beam with regard to a sample on which the resist layer is formed on a member to be patterned, a shot data making and processing device, which is involved in making shot data for each shot of the charged-particle beam to be irradiated on the resist layer is installed. To this end, used are design data for the micropatterns and correctional information for each of the cross-sectional size of the shot and a shot irradiation position which are obtained from in-plane distributional data for XY dimensional variations when patterns for measuring dimensions are formed, under a certain condition, on a testing sample which has a composition of layers corresponding to the sample. |
