VARIABLE BURIED OXIDE THICKNESS FOR A WAVEGUIDE

摘要

A semiconductor structure is provided in which a plurality of waveguide structures are embedded within a semiconductor handle substrate. Each waveguide structure includes, from bottom to top, a bottom oxide portion, a waveguide core material portion and a top oxide portion. An oxide capping layer is present on topmost surfaces of each waveguide structure and a topmost surface of the semiconductor handle substrate. A plurality of semiconductor devices is located above a topmost surface of the oxide capping layer. The structure has thicker buried oxide regions defined by the combined thicknesses of the top oxide portion and the oxide capping layer located in some areas, while thinner buried oxide regions defined only by the thickness of the oxide capping layer are present in other areas of the structure.

主权项

1. A method of forming a semiconductor structure, said method comprising:
providing a plurality of waveguide structures embedded within a semiconductor handle substrate, each waveguide structure of said plurality of waveguide structures comprising, from bottom to top, an bottom oxide portion, a waveguide core material portion and a top oxide portion, wherein topmost surfaces of each waveguide structure of said plurality of waveguide structures are coplanar with a topmost surface of said semiconductor handle substrate; forming an oxide capping layer on said topmost surfaces of each waveguide structure of said plurality of waveguide structures and said topmost surface of said semiconductor handle substrate; providing a semiconductor material layer on a topmost surface of said oxide capping layer; and forming a plurality of semiconductor devices located above said topmost surface of said oxide capping layer, each semiconductor device of said plurality of semiconductor devices comprises a portion of said semiconductor material layer.