| 摘要 |
A semiconductor light-emitting device includes a substrate, a first cladding layer over the substrate, an active region on the first cladding layer, and a second cladding layer on the active region, wherein the active region includes a first type barrier layer that is doped and a second type barrier layer that is undoped, the first type barrier layer being closer to the first cladding layer than the second type barrier layer. |
