| 摘要 |
The invention relates to a manufacturing process of semiconductor material of element III nitride from a starting substrate, the process comprising: the formation of an intermediate layer based on silicon on a starting substrate, said intermediate layer comprising at least two adjacent zones of different crystalline orientations, especially a monocrystalline zone and an amorphous or poly-crystalline zone, growth via epitaxy of a layer of element III nitride on said intermediate layer, the intermediate layer being intended to be vaporised spontaneously during the step consisting of growing the layer of element III nitride via epitaxy. |
