SEMICONDUCTOR DEVICE CONSTITUTING BIPOLAR TRANSISTOR

摘要

Base regions (32,33) of two stage transistors are formed in a substrate consisting of low and high resistivity collective layers. The emitter region of the second stage transistor has an interdigital structure with a number of finger portions (37 to 44). The second stage transistor emitted surface electrode has an extending portion (471) at a position spaced apart from a transistor operating region. Slits are formed in a portion of the emitter surface electrode extending from the emitter connection electrode to the transistor operation region. The slits are bypassed by emitter current so that the lead resistance from each finger portion to the emitter connection electrode is uniform.