| 摘要 |
A method is described for forming contact vias, comprising
- providing a substrate comprising a plurality of contact structures (5) embedded in a first dielectric layer (41), said contacts abutting an upper surface of said first dielectric layer;
- providing a second dielectric layer (42) on said upper surface of said first dielectric layer;
- providing contact vias in said second dielectric layer by patterning said second dielectric layer at least at positions corresponding to said contact structures; wherein patterning said second dielectric layer comprises using a Directed Self-Assembly (DSA) patterning technique involving a block co-polymer (71, 72). |
