| 摘要 |
A pattern wafer (10) for LEDs is provided with an uneven structure A (20) having an arrangement with n-fold symmetry substantially on at least a part of the main surface, where in at least a part of the uneven structure A (20), a rotation shift angle ˜ meets 0°‰¤˜‰¤(180/n)° in which ˜ is the rotation shift angle of an arrangement axis A of the uneven structure A (20) with respect to a crystal axis direction in the main surface, and a top of the convex-portion of the uneven structure A (20) is a corner portion with a radius of curvature exceeding "0". A first semiconductor layer (30), light emitting semiconductor layer (40) and second semiconductor layer (50) are layered on the uneven structure A (20) to constitute an epitaxial wafer (100) for LEDs. It is possible to provide the pattern wafer for LEDs and epitaxial wafer for LEDs with cracks and internal quantum efficiency IQE improved. |
