METHODS AND APPARATUS FOR THE VAPORIZATION AND DELIVERY OF SOLUTION PRECURSORS FOR ATOMIC LAYER DEPOSITION

摘要

Improved apparatus and methods for atomic layer deposition (ALD) are described—In particular, improved methods and apparatus for the vaporization and delivery of solution ALD precursors are provided. The present invention is particularly useful for processing lower volatile metal, metal oxide, metal nitride and other thin film precursors. The present invention uses total vaporization chambers and room temperature valve systems to generate true ALD vapor pulses while increasing utilization efficiency of the solution precursors.