Process for the electrochemical deposition of a semiconductor material

摘要

A process for the electrochemical deposition of a semiconductor material, which process comprises: (i) providing a non-aqueous solvent; (ii) providing at least one precursor salt which forms a source of the constituent elements within the semiconductor material to be deposited; and (iii) electrodepositing the semiconductor material onto an electrode substrate using the precursor salt in the non-aqueous solvent, characterized in that: (iv) the semiconductor material is a p-block or a post-transition metal semiconductor material containing at least one p-block element or post-transition metal; and (v) the non-aqueous solvent is a halocarbon non-aqueous solvent.

主权项

1. A process for the electrochemical deposition of a semiconductor material, which process comprises:
(i) providing a non-aqueous solvent; (ii) providing at least one precursor salt which comprises a halometallate anion salt wherein a metal in the halometallate is Al, Ga, In, Ge, Sn, Pb, As, Sb, Bi, Se, Te, Cd or Hg and which forms a source of the constituent elements within the semiconductor material to be deposited; and (iii) electrodepositing the semiconductor material onto an electrode substrate using the precursor salt in the non-aqueous solvent, characterised in that: (iv) the semiconductor material is a p-block or a post-transition metal semiconductor material containing at least one p-block element or post-transition metal; and (v) the non-aqueous solvent is a halocarbon non-aqueous solvent.