Method and system for interleaved boost converter with co-packaged gallium nitride power devices

摘要

An electronic package includes a leadframe and a plurality of pins. The electronic package also includes a first gallium nitride (GaN) transistor comprising a source, gate, and drain and a second GaN transistor comprising a source, gate, and drain. The source of the first GaN transistor is electrically connected to the leadframe and the drain of the second GaN transistor is electrically connected to the leadframe. The electronic package further includes a first GaN diode comprising an anode and cathode and a second GaN diode comprising an anode and cathode. The anode of the first GaN diode is electrically connected to the leadframe and the anode of the second GaN diode is electrically connected to the leadframe.

主权项

1. An electronic package comprising:
a leadframe; a plurality of pins; a first gallium nitride (GaN) transistor comprising a source, gate, and drain, wherein the drain of the first GaN transistor is electrically connected to the leadframe; a second GaN transistor comprising a source, gate, and drain, wherein the drain of the second GaN transistor is electrically connected to the leadframe; a first GaN diode comprising an anode and cathode, wherein the anode of the first GaN diode is electrically connected to the leadframe and the cathode of the first GaN diode is wire bonded to an output pin of the plurality of pins; and a second GaN diode comprising an anode and cathode, wherein the anode of the second GaN diode is electrically connected to the leadframe and the cathode of the second GaN diode is wire bonded to the output pin of the plurality of pins.