Semiconductor device and fabricating method thereof

摘要

A semiconductor device includes an interlayer insulating film formed on a substrate and including a trench, a gate insulating film formed in the trench, a work function adjusting film formed on the gate insulating film in the trench along sidewalls and a bottom surface of the trench, and including an inclined surface having an acute angle with respect to the sidewalls of the trench, and a metal gate pattern formed on the work function adjusting film in the trench to fill up the trench.

主权项

1. A semiconductor device comprising:
a substrate including a first surface; an interlayer insulating film disposed on the first surface of the substrate and including a trench; a gate insulating film disposed in the trench; a first work function adjusting film disposed in the trench, and disposed on or above the gate insulating film; a second work function adjusting film disposed in the trench, and disposed on the first work function adjusting film; and a metal gate pattern disposed on or above the second work function adjusting film, and filling the trench, wherein the first work function adjusting film includes a first portion extending along a first sidewall of the trench, a second portion extending along a second sidewall of the trench and a third portion extending along a bottom surface of the trench, the first portion of the first work function adjusting film includes a top surface that is inclined with respect to the first surface of the substrate, and an uppermost point of the second work function adjusting film is below an uppermost point of the first work function adjusting film.