Organic light emitting diode display device and method of fabricating the same

摘要

An organic light emitting diode display device comprises a driving thin film transistor including a first semiconductor layer, a gate insulating layer formed on the first semiconductor layer. The device further includes a storage capacitor including a first capacitor electrode electrically coupled to a drain electrode of the driving thin film transistor, a buffer layer formed on the first capacitor electrode, a second semiconductor layer formed on the buffer layer, and a second capacitor electrode formed on the second semiconductor layer and electrically coupled to a gate electrode of the driving thin film transistor. The device also includes an organic light emitting diode connected to the drain electrode of the driving transistor. The gate insulating layer has at least one hole in a region where the gate insulating layer overlaps the second semiconductor layer, thereby exposing the second semiconductor layer to the second capacitor electrode.

主权项

1. An organic light emitting diode display device comprising:
a driving thin film transistor including a first semiconductor layer, a gate insulating layer formed on the first semiconductor layer, a gate electrode formed on the gate insulating layer, a source electrode, and a drain electrode, the source electrode and the drain electrode formed co-planar with the gate electrode on a same side with respect to the gate insulating layer; a storage capacitor including a first capacitor electrode electrically coupled to the drain electrode of the driving thin film transistor, a buffer layer formed on the first capacitor electrode, a second semiconductor layer formed on the buffer layer, and a second capacitor electrode formed on the second semiconductor layer and electrically coupled to the gate electrode of the driving thin film transistor; and an organic light emitting diode (OLED) connected to the drain electrode of the driving thin film transistor and configured to emit light by current driven through the OLED by the driving thin film transistor, wherein the gate insulating layer has at least one hole in a region where the gate insulating layer overlaps the second semiconductor layer, thereby exposing the second semiconductor layer to the second capacitor electrode.