METHOD FOR FORMING AMORPHOUS CARBON MONOLAYER AND ELECTRONIC DEVICE HAVING THE AMORPHOUS CARBON MONOLAYER

摘要

Disclosed are a method for forming an amorphous carbon monolayer and an electronic device having the amorphous carbon monolayer. The disclosed method for forming an amorphous carbon monolayer forms the amorphous carbon monolayer on a surface of a germanium (Ge) substrate via a chemical vapor deposition (CVD) process. Herein, a reaction gas injected into a reaction chamber includes carbon-containing gas and hydrogen gas, and partial pressure of the hydrogen gas in the reaction chamber may range from 1 Torr to 30 Torr.