| 摘要 |
According to a technical concept of the present invention, a semiconductor device comprises: a semiconductor substrate; a fin-type structure formed on the semiconductor substrate; an insulation layer formed on the semiconductor substrate to have an upper surface lower than an upper surface of the fin-type structure; and a gate configured to cover a portion of the upper surface or portions of both sides of the fin-type structure. The gate has a first width at a first level from the upper surface of the insulation layer on a side of the fin-type structure and a second width at a second level lower than the first level. A width of the gate from the first level to the second level can be reduced from the first width to the second width. |
