| 发明名称 | Storage element and storage device | ||
| 摘要 | Provided is an information storage element comprising a first layer, an insulation layer coupled to the first layer, and a second layer coupled to the insulation layer opposite the first layer. The first layer has a transverse length that is approximately 45 nm or less, or an area that is approximately 1,600 nm2 or less, so as to be capable of storing information according to a magnetization state of a magnetic material. The magnetization state is configured to be changed by a current. The insulation layer includes a non-magnetic material. The second layer includes a fixed magnetization so as to be capable of serving as a reference of the first layer. | ||
| 申请公布号 | US9324935(B2) | 申请公布日期 | 2016.04.26 |
| 申请号 | US201414334277 | 申请日期 | 2014.07.17 |
| 申请人 | Sony Corporation | 发明人 | Yamane Kazutaka;Hosomi Masanori;Ohmori Hiroyuki;Bessho Kazuhiro;Higo Yutaka;Asayama Tetsuya;Uchida Hiroyuki |
| 分类号 | G11C11/14;H01L43/02;G11C11/16;H01L43/10;H01F10/32;H01L27/22 | 主分类号 | G11C11/14 |
| 代理机构 | K&L Gates LLP | 代理人 | K&L Gates LLP |
| 主权项 | 1. An information storage element comprising: a first layer having a transverse length that is approximately 45 nm or less so as to be capable of storing information according to a magnetization state of a magnetic material, wherein the magnetization state is configured to be changed by a current; an insulation layer coupled to the first layer, the insulation layer including MgO; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. | ||
| 地址 | Tokyo JP | ||