Through via nub reveal method and structure

摘要

A method includes applying a backside passivation layer to an inactive surface of an electronic component and to enclose a through via nub protruding from the inactive surface. The method further includes laser ablating the backside passivation layer to reveal a portion of the through via nub. The backside passivation layer is formed of a low cost organic material. Further, by using a laser ablation process, the backside passivation layer is removed in a controlled manner to reveal the portion of the through via nub. Further, by using a laser ablation process, the resulting thickness of the backside passivation layer is set to a desired value in a controlled manner. Further, by using a laser ablation process, the fabrication cost is reduced as compared to the use of chemical mechanical polish.

主权项

1. A method of manufacturing an electronic component having at least one through via nub, the method comprising:
forming a through via that extends through a semiconductor die, where the semiconductor die comprises an active surface and an inactive surface; filling the through via with conductive material; etching the inactive surface of the semiconductor die to expose a through via nub of the conductive material protruding from the inactive surface; after said etching, applying a backside passivation layer to the inactive surface of the semiconductor die and thereby enclosing the protruding through via nub; and ablating the backside passivation layer thereby revealing a portion of the through via nub.