| 摘要 |
The present invention relates to a graphene transistor and a manufacturing method thereof. The graphene transistor has at least one bending deformation to control on/off of electricity. The manufacturing method of the transistor includes the following steps: positioning a substrate on an upper portion of a table having at least one electrode fin; and attaching a charged nanoparticle on the substrate by applying voltage to the electrode fin prepared on the table before forming an insulation layer on the substrate or in the middle of forming the insulation layer. |
