| 发明名称 |
Systems and methods for avoiding read disturbance in a static random-access memory (SRAM) |
| 摘要 |
Systems and methods are provided for reading from a static random-access memory (SRAM). The systems and methods include activating a first bitline connected to a first transistor, wherein the first transistor provides access to a state stored by the SRAM. The systems and methods further include preventing a second bitline from being activated when the first bitline is activated, wherein the second bitline is connected to a second transistor that isolates the SRAM from a reference potential when the second bitline is activated, and reading the state stored by the SRAM by triggering a wordline connected to a gate of the first transistor. |
| 申请公布号 |
US9324417(B1) |
申请公布日期 |
2016.04.26 |
| 申请号 |
US201414586096 |
申请日期 |
2014.12.30 |
| 申请人 |
Marvell International Ltd. |
发明人 |
Lee Winston;Lee Peter |
| 分类号 |
G11C11/40;G11C11/419;G11C11/41 |
主分类号 |
G11C11/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for reading from a static random-access memory (SRAM), the method comprising:
activating a first bitline connected to a first transistor, wherein the first transistor provides access to a state stored by the SRAM; preventing a second bitline from being activated when the first bitline is activated, wherein the second bitline is connected to a second transistor that isolates the SRAM from a reference potential when the second bitline is activated; and reading the state stored by the SRAM by triggering a wordline connected to a gate of the first transistor. |
| 地址 |
Hamilton BM |
