Method for fabricating semiconductor device

摘要

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least one metal gate thereon, a source/drain region adjacent to two sides of the at least one metal gate, and an interlayer dielectric (ILD) layer around the at least one metal gate; forming a plurality of contact holes in the ILD layer to expose the source/drain region; forming a first metal layer in the contact holes; performing a first thermal treatment process; and performing a second thermal treatment process.

主权项

1. A method for fabricating semiconductor device, comprising:
providing a substrate having at least one metal gate thereon, a source/drain region adjacent to two sides of the at least one metal gate, a contact etch stop layer (CESL) around the at least one metal gate, and an interlayer dielectric (ILD) layer around the at least one metal gate, wherein the metal gate comprises a work function metal layer and a low resistance metal layer; removing part of the ILD layer to form a plurality of contact holes exposing the source/drain region, the CESL, and the metal gate; forming a first metal layer and a second metal layer in the contact holes, wherein the first metal layer contacts the CESL directly; performing a first thermal treatment process after forming the first metal layer and the second metal layer; and performing a second thermal treatment process to form a silicide on the source/drain region while no silicide is formed on the metal gate.