Semiconductor device and manufacturing method thereof

摘要

A manufacturing method of a semiconductor device according to the present invention includes the steps of (a) preparing an insulating or conductive substrate; (b) arranging a bonding material having sinterability in at least one bonding region of a principal surface of the substrate (i.e., insulating substrate); and (c) sintering the bonding material while a bonding surface to be subjected to bonding of at least one semiconductor element is brought into pressurized contact with the bonding material, and bonding the substrate (i.e., insulating substrate) and the semiconductor element together through the bonding material. The bonding region in the step (b) is inwardly positioned from the bonding surface (i.e., region) of the semiconductor element in plan view, and the bonding material is not protruded outwardly from the bonding surface of the semiconductor element in plan view even after the step (c).

主权项

1. A manufacturing method of a semiconductor device, comprising the steps of:
(a) preparing an insulating or conductive substrate and at least one semiconductor element having an electrode on one side thereof as a bonding surface of the semiconductor element; (b) arranging a bonding material having sinterability in at least one bonding region of a principal surface of said substrate; and (c) sintering said bonding material while said bonding surface of said semiconductor element is brought into pressurized contact with said bonding material, to bond said substrate and said semiconductor element, wherein said bonding surface has an outer edge, and said bonding material is inwardly positioned from the outer edge of the bonding surface of said semiconductor element in plan view even after said step (c).