| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive nonvolatile semiconductor storage device having high reliability.SOLUTION: In a nonvolatile semiconductor storage device, memory strings include: a semiconductor layer having a pair of pillar parts each extending in a vertical direction with respect to a substrate and a connection part formed to connect bottoms of the pair of pillar parts; a charge storage layer formed to surround lateral faces of the pillar parts; a first insulation film including the lateral faces of the pillar parts and the charge storage layer; a first conductive layer formed to cover the lateral faces of the pillar parts and the first insulation film; a second insulation film formed around the connection part; and a second conductive layer formed on the connection part via a gate insulation film. |
