发明名称 |
Silicon carbide epitaxial wafer, and preparation method thereof |
摘要 |
According to an embodiment, there is provided a method of fabricating an epitaxial wafer, which includes preparing a wafer in a susceptor; and growing an epitaxial layer on the wafer, wherein the growing of the epitaxial layer on the wafer includes supplying a raw material into the susceptor; growing the epitaxial layer on the wafer at a first growth rate; and growing the epitaxial layer on the wafer at a second growth rate higher than the first growth rate. According to an embodiment, there is provided a silicon carbide epitaxial wafer which includes a silicon carbide wafer; and a silicon carbide epitaxial layer on the silicon carbide wafer wherein a surface defect formed on the silicon carbide epitaxial layer is 1 ea/cm2 or less. |
申请公布号 |
US9324561(B2) |
申请公布日期 |
2016.04.26 |
申请号 |
US201314404374 |
申请日期 |
2013.05.28 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
Kang Seok Min |
分类号 |
H01L29/15;H01L21/02;C30B25/02;C30B29/36;H01L29/16 |
主分类号 |
H01L29/15 |
代理机构 |
LRK Patent Law Firm |
代理人 |
LRK Patent Law Firm |
主权项 |
1. A method of fabricating a silicon carbide epitaxial wafer, the method comprising:
preparing a silicon carbide wafer in a susceptor; and growing a silicon carbide epitaxial layer on the silicon carbide wafer, wherein the growing of the silicon carbide epitaxial layer on the silicon carbide wafer comprises: supplying a raw material into the susceptor; growing the silicon carbide epitaxial layer on the silicon carbide wafer at a first growth rate; and growing the silicon carbide epitaxial layer on the silicon carbide wafer at a second growth rate higher than the first growth rate, wherein the raw material includes carbon, silicon and chlorine. |
地址 |
Seoul KR |