| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which leakage current of a gate insulation film is small.SOLUTION: A semiconductor device of an embodiment comprises: a SiC layer which has a first region of N-N<5×10cmon a surface where Nis a concentration of a p-type impurity and Nis a concentration of an n-type impurity, in which the surface is a plane inclined to [000-1] plane at not less than 0 degree and not more than 10 degrees or a plane with a normal direction inclined to <000-1> direction at not less than 80 degrees and not more than 90 degrees; a gate electrode; a gate insulation film provided between the SiC layer and the gate electrode; and a second region which is provided between the SiC layer and the gate insulation film and has a nitrogen concentration higher than 1×10cm.SELECTED DRAWING: Figure 1 |
