OXIDE SINTERED BODY AND METHOD FOR PRODUCING THE SAME, TARGET FOR SPATTERING, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an oxide sintered body suitably used as a target for spattering for forming an oxide semiconductor film of a semiconductor device having high properties by a spattering method and a semiconductor device containing oxide semiconductor film formed by using the oxide sintered body.SOLUTION: There is provided the oxide sintered body which is an oxide sintered body containing indium, tungsten and yttrium, and which contains a bixbyte type crystal phase of 80% or more and has an apparent density of more than 6.5 g/cmand 8.25 g/cmor less, and in which the content of tungsten with respect to the total of indium, tungsten and yttrium is more than 0.5 atom% and less than 30 atom% and the content of yttrium with respect to the total of indium, tungsten and yttrium is more than 0.5 atom% and less than 30 atom%. A semiconductor device 10 includes an oxide semiconductor film 14 formed by a sputtering method using a target for sputtering containing the oxide sintered body.SELECTED DRAWING: Figure 1