| 摘要 |
PROBLEM TO BE SOLVED: To provide a reflective mask blank and a reflective mask which are low in defect and have a multilayer reflective film with high smoothness, and by which the charge-up in mask defect inspection by an electron beam can be prevented.SOLUTION: A reflective mask blank for EUV lithography is arranged by laminating, on a substrate, a conductive base film on the substrate, a multilayer reflective film which reflects exposure light, and an absorber film which absorbs the exposure light. The conductive base film is provided adjacent to the multilayer reflective film, and is made of a ruthenium-based material having a film thickness of 1-10 nm. A reflective mask is arranged by use of the mask blank. A semiconductor device is manufactured with the reflective mask.SELECTED DRAWING: Figure 1 |
