发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of improving operation reliability.SOLUTION: A semiconductor storage device comprises: a first memory cell group including a plurality of memory cells; a second memory cell group including a plurality of memory cells and having smaller parasitic capacitance than the first memory cell group; a first bit line electrically connected to the first memory cell group; a second bit line electrically connected to the second memory cell group; a first sense module electrically connected to the first bit line and for sensing the data stored in the first memory cell group; and a second sense module electrically connected to the second bit line and for sensing the data stored in the second memory cell group.SELECTED DRAWING: Figure 7
申请公布号 JP2016062621(A) 申请公布日期 2016.04.25
申请号 JP20140187076 申请日期 2014.09.12
申请人 TOSHIBA CORP 发明人 BUSHNAQ SANAD SALEH KHAIREDDEEN;SHIRAKAWA MASANOBU
分类号 G11C16/02;G11C16/06;H01L21/336;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C16/02
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