发明名称 |
SEMICONDUCTOR STORAGE DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of improving operation reliability.SOLUTION: A semiconductor storage device comprises: a first memory cell group including a plurality of memory cells; a second memory cell group including a plurality of memory cells and having smaller parasitic capacitance than the first memory cell group; a first bit line electrically connected to the first memory cell group; a second bit line electrically connected to the second memory cell group; a first sense module electrically connected to the first bit line and for sensing the data stored in the first memory cell group; and a second sense module electrically connected to the second bit line and for sensing the data stored in the second memory cell group.SELECTED DRAWING: Figure 7 |
申请公布号 |
JP2016062621(A) |
申请公布日期 |
2016.04.25 |
申请号 |
JP20140187076 |
申请日期 |
2014.09.12 |
申请人 |
TOSHIBA CORP |
发明人 |
BUSHNAQ SANAD SALEH KHAIREDDEEN;SHIRAKAWA MASANOBU |
分类号 |
G11C16/02;G11C16/06;H01L21/336;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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