| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device with improved data writing reliability.SOLUTION: A semiconductor storage device according to one embodiment comprises a first set including memory cells, a second set including memory cells, and a control circuit which can perform writing operation according to one command. The writing operation includes a first operation and a second operation. The first operation includes a first loop and a second loop. A second program voltage of the second loop is higher than a first program voltage of the first loop by a first voltage. The second operation includes a third loop and a fourth loop. A fourth program voltage of the fourth loop is higher than a third program voltage of the third loop by a second voltage, and the second voltage is lower than the first voltage. In the writing operation, the control circuit performs the first operation for the first set, the first operation for the second set, the second operation for the first set, and the second operation for the second set in this order.SELECTED DRAWING: Figure 5 |
