INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an integrated circuit device having high operating speed; and provide a manufacturing method of the integrated circuit device.SOLUTION: An integrated circuit device according to an embodiment comprises: a plurality of first electrode films laminated at a distance from each other; a plurality of second electrode films which are laminated on the first electrode films at a distance from each other and extend in one direction; semiconductor pillars which pierce the first electrode films and the second electrode films; memory films which are provided between the first electrode films and the semiconductor pillars and capable of storing charge; gate insulation films provided between the second electrode films and the semiconductor pillars; and spacer films which extend in one direction and electrically connect ends in a width direction of the plurality of electrode films laminated at a distance from each other and the plurality of second electrode films each other.SELECTED DRAWING: Figure 3