THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY

摘要

Disclosed is a TFT substrate, including a substrate and a gate electrode thereon. A gate insulation layer over the substrate covers the gate electrode. An active layer is disposed over the gate insulation layer. An etch stop layer is disposed over the active layer and the gate insulation layer. A first opening penetrates the etch stop layer to expose a first part of the active layer. A source electrode over the etch stop layer is electrically connected to the first part of the active layer through the first opening. A first inorganic insulation layer is disposed over the source electrode and the etch stop layer. A second opening penetrates the first inorganic insulation layer and the etch stop layer to expose a second part of the active layer.

主权项

1. A thin film transistor substrate, comprising:
a substrate; a gate electrode disposed over the substrate; a gate insulation layer disposed over the substrate and covering the gate electrode; an active layer disposed over the gate insulation layer; an etch stop layer disposed over the active layer and the gate insulation layer; a first opening penetrating the etch stop layer to expose a first part of the active layer; a source electrode disposed over the etch stop layer and electrically connected to the first part through the first opening; a first inorganic insulation layer disposed over the source electrode and the etch stop layer; a second opening penetrating the first inorganic insulation layer and the etch stop layer to expose a second part of the active layer; a barrier layer disposed over a sidewall and a bottom of the second opening and contacting the second part; an organic insulation layer disposed over the first inorganic insulation layer; a third opening penetrating the organic insulation layer to expose the barrier layer; and a transparent electrode disposed over a part of the organic insulation layer and contacting the barrier layer through the third opening.