| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing composition which enables the polishing of a Co film in a semiconductor substrate that includes many films including cobalt (Co), a metal, a metal oxide and a dielectric.SOLUTION: A polishing composition comprises: a polishing material; a weak acid working as a removal rate-enhancement agent (RRE); a pH adjuster; and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI each have a value of pKa (1(pKa)<pKa<18(pKa)) within a range of 1-18. The pKa values of the respective constituents are associated with each other by the polishing composition/slurry pH(pH), and the following formula: pKa+6<pH<pKa-6. The polishing composition has about less than 100 ppm (parts per million) of sulfuric acid ions and about less than 100 ppm of halide ions, and acts in a range of pH7-pH12.SELECTED DRAWING: None |
