METHOD FOR MANUFACTURING IMAGING APPARATUS, AND IMAGING APPARATUS

摘要

A gate electrode of a field effect transistor is formed. Next, an offset spacer film with a double-layer structure including a silicon oxide film as a lower-layer film and a silicon nitride film as an upper-layer film is formed on a sidewall surface of the gate electrode. The silicon nitride film serves as a supply source of an element for terminating dangling bonds of silicon in a device formation region. Next, treatment for leaving the offset spacer film intact or treatment for removing the silicon nitride film of the offset spacer film is performed. Thereafter, a sidewall insulating film is formed on the sidewall surface of the gate electrode.

主权项

1. A method for manufacturing an imaging apparatus, comprising the steps of:
forming trenches in a semiconductor substrate; defining a plurality of device formation regions by forming a device isolation insulating film in said trenches; and forming a semiconductor device in each of said plurality of device formation regions, the step of forming said semiconductor device including the steps of
forming a photoelectric conversion portion, andforming a transistor having a gate electrode portion, which processes a charge generated in said photoelectric conversion portion as a signal, the step of forming said gate electrode portion of said transistor including the steps of
forming a gate electrode to traverse a predetermined device formation region of said plurality of device formation regions, in a manner to cover a boundary between said predetermined device formation region and said device isolation insulating film,forming a film which is to be an offset spacer film having a first insulating film as a lower-layer film and a predetermined film different from said first insulating film as an upper-layer film, to cover said gate electrode,forming the offset spacer film including at least said first insulating film, on a sidewall surface of said gate electrode, by working the film which is to be said offset spacer film, andforming a sidewall insulating film on said sidewall surface of said gate electrode, with said offset spacer film being interposed therebetween, wherein in the step of forming the film which is to be said offset spacer film, a film containing at least one of nitrogen (N) and hydrogen (H) is formed as said predetermined film, in the step of forming said offset spacer film, said first insulating film is worked to leave a first portion which covers said sidewall surface of said gate electrode, and a second portion which extends from a lower end portion of said first portion to a side opposite to a side on which said gate electrode is located, and covers a surface of said predetermined device formation region, and in the step of forming said sidewall insulating film, said sidewall insulating film is formed to cover an end surface of said second portion of said first insulating film.