| 摘要 |
A field-effect transistor (100) is provided with a channel (30c) formed of a semiconductor nano wire (30). A source region (30s) and a drain region (30d) are formed adjacent to the channel (30c), and a gate electrode (40) is provided above the channel. On the main surface of the semiconductor nano wire (30), a mask layer (50) is provided, said mask layer containing dopant atoms to be a donor or an acceptor. Though the dopant atoms are ion-implanted into the mask layer (50) on a side wall portion of the gate electrode (40) as well, the implanted ions stay at an upper portion, and are not implanted as far as to a portion in contact with the main surface of the semiconductor nano wire (30). Consequently, a mask layer portion formed with a thickness W on the side wall of the gate electrode (40) does not function as a diffusion source of the dopant. |
