发明名称 Magnetoresistive Sensor Module and Method for Manufacturing the Same
摘要 In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
申请公布号 US2016109536(A1) 申请公布日期 2016.04.21
申请号 US201514972648 申请日期 2015.12.17
申请人 Infineon Technologies AG 发明人 Kolb Stefan;Pruegl Klemens;Zimmer Juergen
分类号 G01R33/09;H01L43/12;G01R33/07 主分类号 G01R33/09
代理机构 代理人
主权项 1. A magnetoresistive sensor module, comprising: an arrangement having a semiconductor substrate, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate, and a metal-insulator arrangement, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a plurality of structured metal sheets with surrounding insulation layers, wherein the structured metal sheets are electrically connected to the semiconductor circuit arrangement; a first metal filled via and a second metal filled via through a topmost layer of the insulation material, the first metal filled via being electrically connected to a first portion of the top most structured metal sheet, and the second metal filled via being electrically connected to a second portion of the topmost structured metal sheet, the first portion being electrically isolated from the second portion; the first and second metal filled via ending flush with a surface of the topmost layer of the insulation material so as to achieve a planar surface of the insulation material and the first and second metal filled via; and a magnetoresistive sensor structure, which is applied on the planar surface of the topmost layer of insulation material of the metal-insulator arrangement and over the first and second metal filled vias, so as to establish an electrical connection between the magnetoresistive sensor structure and the first and second portion of the topmost structured metal sheet, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
地址 Neubiberg DE