SILICON CARBIDE SEMICONDUCTOR ELEMENT AND SILICON CARBIDE SEMICONDUCTOR ELEMENT MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To establish long-lasting drive credibility in a silicon carbide semiconductor element.SOLUTION: A silicon carbide semiconductor element comprises an ohmic contact electrode part 8 composed of a nickel silicide film having surface unevenness with a height difference in of over 20 nm on an nsilicon carbide substrate 1. A boundary of the nsilicon carbide substrate 1 and the nickel silicide film has discontinuous points. The above-described silicon carbide semiconductor element is formed by: providing a nickel film on a surface of the nsilicon carbide substrate 1 having a height difference of less than 10 nm on the surface; and performing annealing on an interface between the nsilicon carbide substrate 1 and the nickel film in the presence of oxygen to provide silicide on the surface of the nsilicon carbide substrate 1.SELECTED DRAWING: Figure 1