发明名称 SEMICONDUCTOR POWER MODULE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor power module manufacturing method which can improve connection reliability of a through conductor while maintaining insulating characteristics at an insulating bonded part in a bonded layer.SOLUTION: A semiconductor power module manufacturing method comprises: a preparation process of preparing a first glass sheet 61 where a cavity 50 is formed by penetration and a plurality of second glass sheets 62 in each of which through holes 48 are formed and which are arranged on both surfaces of the first glass sheet 61; a filling process of filling the through holes 48 with a conductive paste 65; a lamination process of laminating the first glass sheet 61 and the plurality of second glass sheets 62 on a first surface 11a of a wiring board 11; and a sintering process of sintering the first glass sheet 61 and the second glass sheets 62 in a state of being compressed in a thickness direction to form a bonded layer. In the lamination process, the glass sheets 61, 62 formed in a manner such that the first glass sheet 61 has fluidity higher than fluidity of the second glass sheet 62 are used.SELECTED DRAWING: Figure 7
申请公布号 JP2016058417(A) 申请公布日期 2016.04.21
申请号 JP20140180884 申请日期 2014.09.05
申请人 NGK SPARK PLUG CO LTD 发明人 KIMURA KENJI;TAKAYAMA YASUSHI
分类号 H01L23/12;H01L25/07;H01L25/18;H05K1/03;H05K3/46 主分类号 H01L23/12
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