| 摘要 |
PROBLEM TO BE SOLVED: To provide a division method by which a wafer having a TEG (test elements group) formed therein along a street can be appropriately divided.SOLUTION: The method includes: a first resist film coating step of coating a top side of a wafer (11) with a first resist film (23); a first etching step of etching the top side of the wafer with plasma to remove a low dielectric constant insulation film (19) between a device (17a) and a TEG (17b); a first resist film removing step; a protective member sticking step of sticking a protective member (25) on the top side of the wafer; a second resist film coating step of coating the rear side of the wafer with a second resist film (27); a second etching step of etching the rear side of the wafer with plasma to remove a part corresponding to a street (15) of a semiconductor substrate (13); a second resist film removing step; a wafer holding step of sticking an adhesive tape (29) on the rear side of the wafer; and a protective member removing step of peeling the protective member from the top side of the wafer.SELECTED DRAWING: Figure 5 |
