LOW TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR AND MANUFACTURING METHOD, ARRAY SUBSTRATE AND DISPLAY DEVICE

摘要

A low temperature poly-silicon thin film transistor and a manufacturing method, an array substrate and a display device. The manufacturing method for the low temperature poly-silicon thin film transistor comprises: S1: sequentially forming an active layer (3), a gate electrode insulating layer (4), a gate electrode (5) and an interlayer insulating layer (6) on an underlayer substrate (1); S2: forming a first metal thin film layer (8); S3: performing hydrogenation processing on the active layer (3) and the gate electrode insulating layer (4); and S4: forming a second metal thin film layer (7), wherein the second metal thin film layer (7) is used for forming a source electrode and a drain electrode.