Phase hysteretic magnetic Josephson junction memory cell

摘要

One embodiment describes a memory cell. The memory cell includes a phase hysteretic magnetic Josephson junction (PHMJJ) that is configured to store one of a first binary logic state corresponding to a binary logic-1 state and a second binary logic state corresponding to a binary logic-0 state in response to a write current and to generate a superconducting phase based on the stored digital state. The memory cell also includes at least one Josephson junction having a critical current that is based on the superconducting phase of the PHMJJ and being configured to provide an output corresponding to the stored digital state in response to a read current.