发明名称 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
摘要 A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate having a trench, a stacked strip structure formed in the trench, and at least a conductive structure. The stacked strip structure includes a plurality of interlaced conductive strips and insulating strips. Each of the conductive strips has a horizontal conductive segment and two vertical conductive segments connected to the corresponding horizontal conductive segment. Each of the insulating strips has a horizontal insulating segment and two vertical insulating segments. The conductive structure is electrically connected to at least one of the conductive strips. The stacked strip structure has a horizontal stacked portion corresponding to the horizontal conductive segments and two vertical stacked portions corresponding to the vertical conductive segments, wherein a width of the vertical stacked portions is larger than a thickness of the horizontal stacked portion.
申请公布号 US2016111366(A1) 申请公布日期 2016.04.21
申请号 US201414518050 申请日期 2014.10.20
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 Lai Erh-Kun
分类号 H01L23/528;H01L21/3105;H01L21/768 主分类号 H01L23/528
代理机构 代理人
主权项 1. A semiconductor structure, comprising: a substrate having a trench; a stacked strip structure formed in the trench, comprising: a plurality of conductive strips, wherein each of the conductive strips has a horizontal conductive segment and two vertical conductive segments connected to the corresponding horizontal conductive segment, the horizontal conductive segments extend in a direction parallel to a bottom of the trench, and the vertical conductive segments extend in a direction perpendicular to the bottom of the trench; and a plurality of insulating strips, wherein the conductive strips and the insulating strips are interlaced, each of the insulating strips has a horizontal insulating segment and two vertical insulating segments connected to the corresponding horizontal insulating segment, and the vertical insulating segments extend in a direction parallel to the direction in which the vertical conductive segments extend; and at least one conductive structure electrically connected to at least one of the conductive strips; wherein the stacked strip structure has a horizontal stacked portion corresponding to the horizontal conductive segments and two vertical stacked portions corresponding to the vertical conductive segments, and a width of the vertical stacked portions is larger than a thickness of the horizontal stacked portion.
地址 Hsinchu TW