发明名称 |
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate having a trench, a stacked strip structure formed in the trench, and at least a conductive structure. The stacked strip structure includes a plurality of interlaced conductive strips and insulating strips. Each of the conductive strips has a horizontal conductive segment and two vertical conductive segments connected to the corresponding horizontal conductive segment. Each of the insulating strips has a horizontal insulating segment and two vertical insulating segments. The conductive structure is electrically connected to at least one of the conductive strips. The stacked strip structure has a horizontal stacked portion corresponding to the horizontal conductive segments and two vertical stacked portions corresponding to the vertical conductive segments, wherein a width of the vertical stacked portions is larger than a thickness of the horizontal stacked portion. |
申请公布号 |
US2016111366(A1) |
申请公布日期 |
2016.04.21 |
申请号 |
US201414518050 |
申请日期 |
2014.10.20 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
Lai Erh-Kun |
分类号 |
H01L23/528;H01L21/3105;H01L21/768 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor structure, comprising:
a substrate having a trench; a stacked strip structure formed in the trench, comprising: a plurality of conductive strips, wherein each of the conductive strips has a horizontal conductive segment and two vertical conductive segments connected to the corresponding horizontal conductive segment, the horizontal conductive segments extend in a direction parallel to a bottom of the trench, and the vertical conductive segments extend in a direction perpendicular to the bottom of the trench; and a plurality of insulating strips, wherein the conductive strips and the insulating strips are interlaced, each of the insulating strips has a horizontal insulating segment and two vertical insulating segments connected to the corresponding horizontal insulating segment, and the vertical insulating segments extend in a direction parallel to the direction in which the vertical conductive segments extend; and at least one conductive structure electrically connected to at least one of the conductive strips; wherein the stacked strip structure has a horizontal stacked portion corresponding to the horizontal conductive segments and two vertical stacked portions corresponding to the vertical conductive segments, and a width of the vertical stacked portions is larger than a thickness of the horizontal stacked portion. |
地址 |
Hsinchu TW |