Method and Device for Huge Magnetoresistance in Graphene-Based Magnetic Tunnel Junctions with Segmented Potentials

摘要

A graphene-based magnetic tunnel junction is disclosed. The magnetic tunnel junction can enhance the tunnel magnetoresistance ratio and a device including the magnetic tunnel junction. The magnetic tunnel junction includes: a pinned layer; a free layer; and a graphene with segmented potentials configured between the pinned layer and the free layer. The magnetic tunnel junction may be a series or parallel connection of the above-mentioned basic form. The device including a magnetic tunnel junction may be a magnetic random access memory bit cell, a magnetic tunnel junction transistor device, a magnetic field sensor, etc.

主权项

1. A magnetic tunnel junction, comprising:
a pinned layer; a free layer; and a periodic graphene nanoribbon layer having a plurality of segmented units, and disposed between the pinned layer and the free layer, wherein each of the plurality of segmented units includes at least one first segment and at least one second segment having a potential difference therebetween.