| 发明名称 |
MULTI-LEVEL MEMORY WITH DIRECT ACCESS |
| 摘要 |
Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage. |
| 申请公布号 |
US2016110106(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201514879004 |
申请日期 |
2015.10.08 |
| 申请人 |
Intel Corporation |
发明人 |
Fanning Blaise;Qawami Shekoufeh;Tetrick Raymond S.;Hady Frank T. |
| 分类号 |
G06F3/06 |
主分类号 |
G06F3/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
designating a first amount of a non-volatile random access memory (NVRAM) for use as memory for a computing system; designating a second amount of the NVRAM for use as storage for the computing system; generating a memory remap table based on the first amount of the NVRAM designated for use as memory; generating a storage remap table based on the second amount of NVRAM designated for use as storage; and updating the memory and storage remap tables responsive to a first re-designation of a portion of the first amount of the NVRAM for use as storage or a second re-designation of a portion of the second amount of the NVRAM for use as memory. |
| 地址 |
Santa Clara CA US |
