| 摘要 |
PROBLEM TO BE SOLVED: To enhance ESD resistance and suppress an increase in on-resistance.SOLUTION: A semiconductor device comprises: a first semiconductor region; a first electrode; a second semiconductor region; a third semiconductor region; a second electrode; a first rectifier which is provided on the first semiconductor region and has fourth semiconductor regions and fifth semiconductor regions; a second rectifier which is provided on the first semiconductor region where the second semiconductor region is not provided and the first rectifier is not provided, and has sixth semiconductor regions and seventh semiconductor regions; a third electrode which is provided above the first semiconductor region, and electrically connected to the third semiconductor region, and electrically connected to any one of the fourth semiconductor regions of the first rectifier and any one of the sixth semiconductor regions of the second rectifier; and a fourth electrode which is provided above the first semiconductor region and electrically connected to the second electrode, and electrically connected to the fourth semiconductor regions except the any one and the sixth semiconductor regions except the any one.SELECTED DRAWING: Figure 1 |
