| 发明名称 |
INTERCONNECT STRUCTURE AND FABRICATION METHOD THEREOF |
| 摘要 |
A method for forming an interconnect structure is provided. The method includes providing a substrate with a surface; and forming a metal layer covering the surface of the substrate and with a desired grain size to reduce grain boundary scattering of the interconnect structure subsequently formed with the metal layer. The method also includes etching the metal layer to form a plurality of metal lines on the surface of the substrate and a plurality of metal pillars on each of the plurality of the metal lines of the interconnect structure; and forming a dielectric layer covering the surface of the substrate, surfaces of the metal lines, and side surfaces of the metal pillars. |
| 申请公布号 |
US2016111329(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201514882581 |
申请日期 |
2015.10.14 |
| 申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
ZHANG CHENGLONG;ZHANG HAIYANG |
| 分类号 |
H01L21/768;H01L21/027;H01L23/532;H01L23/522;H01L23/528;H01L21/3213;H01L21/033 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating an interconnect structure, comprising:
providing a substrate with a surface; forming a metal layer covering the surface of the substrate and with a desired grain size to reduce grain boundary scattering of the interconnect structure subsequently formed with the metal layer; etching the metal layer to form a plurality of metal lines on the surface of the substrate and a plurality of metal pillars on each of the plurality of the metal lines of the interconnect structure; and forming a dielectric layer covering the surface of the substrate, surfaces of the metal lines, and side surfaces of the metal pillars. |
| 地址 |
Shanghai CN |
