VARIABLE BURIED OXIDE THICKNESS FOR A WAVEGUIDE

摘要

A semiconductor structure is provided in which a plurality of waveguide structures are embedded within a semiconductor handle substrate. Each waveguide structure includes, from bottom to top, a bottom oxide portion, a waveguide core material portion and a top oxide portion. An oxide capping layer is present on topmost surfaces of each waveguide structure and a topmost surface of the semiconductor handle substrate. A plurality of semiconductor devices is located above a topmost surface of the oxide capping layer. The structure has thicker buried oxide regions defined by the combined thicknesses of the top oxide portion and the oxide capping layer located in some areas, while thinner buried oxide regions defined only by the thickness of the oxide capping layer are present in other areas of the structure.

主权项

1. A semiconductor structure comprising:
a plurality of waveguide structures embedded within a semiconductor handle substrate, each waveguide structure of said plurality of waveguide structures comprising, from bottom to top, a bottom oxide portion, a waveguide core material portion and a top oxide portion, wherein topmost surfaces of each waveguide structure of said plurality of waveguide structures are coplanar with a topmost surface of said semiconductor handle substrate; an oxide capping layer located on said topmost surfaces of each waveguide structure of said plurality of waveguide structures and said topmost surface of said semiconductor handle substrate; and a plurality of semiconductor devices located above a topmost surface of said oxide capping layer, each semiconductor device of said plurality of semiconductor devices comprises a portion of a semiconductor material that is in direct contact with a portion of said topmost surface of said oxide capping layer.