| 摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of detecting an analytic object such as a minute amount of metal or the similar metal included in a silicon substrate, while performing a profile analysis of the concentration of an analytic object in a substrate depth direction.SOLUTION: An analytic method of a silicon substrate includes: an oxide film forming process of forming an oxide film on the surface of a silicon substrate by supplying an oxygen gas including ozone and a recovery process of recovering an analytic object using a nozzle for substrate analysis. The nozzle for substrate analysis is formed of a double pipe, and includes exhaust means defining a gap between a nozzle body and an external pipe as an exhaust route. The recovery process is performed while exhausting between the nozzle body of the nozzle for substrate analysis and the external pipe. With the oxide film forming process, the recovery process, and the arbitrary dry process defined as one cycle, the analytic object included in the substrate depth direction is introduced into the analytic solution.SELECTED DRAWING: Figure 2 |
