Simultaneous Programming of Many Bits in Flash Memory

摘要

A semiconductor device includes: a plurality of memory cells; a plurality of local bit lines connected to respective memory cells of the plurality of memory cells; and a first amplifier. The first amplifier receives read data from each local bit line of the plurality of local bit lines and determines a transition speed of an output level of the first amplifier in response to receiving a combination of at least two pieces of read data. The first amplifier transfers, based on the determined transition speed, multivalued data of the read data to a read global bit line.

主权项

1. A semiconductor device comprising:
a plurality of memory cells; a plurality of local bit lines connected to respective memory cells of the plurality of memory cells; and a first amplifier configured to:
receive read data from each local bit line of the plurality of local bit lines,determine a transition speed of an output level of the first amplifier in response to receiving a combination of at least two pieces of read data, andtransfer multivalued data of the read data to a read global bit line based on the determined transition speed.