| 摘要 |
FIELD: computer engineering.SUBSTANCE: invention presupposes that fact that memristor material contains a nanosized lithium fluoride layer containing metal nanoclusters, while the nanosized layer is made in the form of a film on a dielectric substrate, and copper is used as material for nanoclusters.EFFECT: simplified technology of preparing of memristor material and improvement of technical parameters of R/R>10.1 cl, 2 dwg |
