发明名称 半導体装置の作製方法
摘要 An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device is formed using a material capable of sufficiently reducing the off-state current of a transistor, such as an oxide semiconductor material that is a widegap semiconductor. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor allows data to be held for a long time. In addition, the timing of potential change in a signal line is delayed relative to the timing of potential change in a write word line. This makes it possible to prevent a data writing error.
申请公布号 JP5905951(B2) 申请公布日期 2016.04.20
申请号 JP20140226567 申请日期 2014.11.07
申请人 株式会社半導体エネルギー研究所 发明人 松嵜 隆徳;加藤 清;井上 広樹;長塚 修平
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
代理机构 代理人
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