发明名称 |
PRODUCTION OF POLYCRYSTALLINE SILICON IN SUBSTANTIALLY CLOSED-LOOP PROCESSES THAT INVOLVE DISPROPORTIONATION OPERATIONS |
摘要 |
Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon. |
申请公布号 |
EP2654912(B1) |
申请公布日期 |
2016.04.20 |
申请号 |
EP20110808477 |
申请日期 |
2011.12.16 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
GUPTA, PUNEET;HUANG, YUE;BHUSARAPU, SATISH |
分类号 |
B01D3/00;B01J8/18;B01J19/18;C01B33/02;C01B33/023;C01B33/029;C01B33/107 |
主分类号 |
B01D3/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|