| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device.SOLUTION: A power MOSFET for switching and a sense MOSFET having a small area than the power MOSFET and for detecting a current flowing through the power MOSFET are formed in one semiconductor chip CPH, and the semiconductor chip CPH is mounted on a chip mounting portion and is resin-sealed. A metal plate MP1 is bonded to pads PDHS1a and PDHS1b for source for outputting the current flowing through the power MOSFET. A pad PDHS3 for source for detecting a source voltage of the power MOSFET is located at a position that does not overlap with the metal plate MP1. A connection portion 15 between source wiring 10S3 forming the pad PDHS3 and source wiring 10S1 forming the pads PDHS1a and PDHS1b is located at a position that overlaps with the metal plate MP1. |
